Method and System For Managing Memory Device

ABSTRACT

The subject technology provides for managing a data storage system. A data operation error for a data operation initiated in a first non-volatile memory die of a plurality of non-volatile memory die in the data storage system is detected. An error count for an error type of the data operation error for the first non-volatile memory die is incremented. The incremented error count satisfies a first threshold value for the error type of the data operation error is determined. The first non-volatile memory die is marked for exclusion from subsequent data operations.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 17/227,231,filed on Apr. 9, 2021, which is a continuation of application Ser. No.16/586,756, filed on Sep. 27, 2019, now U.S. Pat. No. 11,010,239, whichis a continuation of application Ser. No. 15/396,405, filed on Dec. 30,2016, now U.S. Pat. No. 10,452,468, the entirety of each of which isincorporated herein by reference for all purposes.

BACKGROUND

The present disclosure relates generally to managing non-volatilememory. Non-volatile memory may experience data operation errors (e.g.,read operation errors, write operation errors, or erase operationerrors) which cause controllers to perform error recovery schemes torecover data from the non-volatile memory. Thus, data operation errorsmay lead to latency in completing data operations in non-volatile memoryand negatively impact performance and reliability of the non-volatilememory.

SUMMARY

Aspects of the subject technology relate to a method for managing a datastorage system. The method may include detecting a data operation errorfor a data operation initiated in a first non-volatile memory die of aplurality of non-volatile memory die in the data storage system. Themethod may also include incrementing an error count for an error type ofthe data operation error for the first non-volatile memory die. Themethod may further include determining the incremented error countsatisfies a first threshold value for the error type of the dataoperation error. The method may also include marking the firstnon-volatile memory die for exclusion from subsequent data operations.

In certain aspects, the subject technology also relates to a datastorage system including a plurality of storage devices, each storagedevice comprising a plurality of non-volatile memory die, and acontroller coupled to the plurality of storage devices. The controllermay be configured to detect a data operation error for a data operationinitiated in a first non-volatile memory die of the plurality ofnon-volatile memory die in the data storage system. The controller mayfurther be configured to increment an error count for an error type ofthe data operation error for the first non-volatile memory die. Thecontroller may also be configured to determine the incremented errorcount satisfies a first threshold value for the error type of the dataoperation error. The controller may further be configured to mark thefirst non-volatile memory die for exclusion from subsequent dataoperations.

Aspects of the subject technology also relate to a machine-readablemedia encoded with executable instructions which, when executed by aprocessor, cause the processor to perform operations. The operations mayinclude detecting a data operation error for a data operation initiatedin a first non-volatile memory die of a plurality of non-volatile memorydie in the data storage system, and incrementing an error count for anerror type of the data operation error for the first non-volatile memorydie, wherein the error count for the error type of the data operationerror comprises a cumulative error count for all blocks of the firstnon-volatile memory die. The operations may also include determining theincremented error count satisfies a first threshold value for the errortype of the data operation error. The operations may further includemarking the first non-volatile memory die for exclusion from subsequentdata operations.

According to other aspects of the subject technology, a data storagesystem is provided. The data storage system may include means fordetecting a data operation error for a data operation initiated in afirst non-volatile memory die of a plurality of non-volatile memory diein the data storage system. The data storage system may also includemeans for incrementing an error count for an error type of the dataoperation error for the first non-volatile memory die. The data storagesystem may further include means for determining the incremented errorcount satisfies a first threshold value for the error type of the dataoperation error. The data storage system may also include means formarking the first non-volatile memory die for exclusion from subsequentdata operations.

It is understood that other configurations of the present disclosurewill become readily apparent to those skilled in the art from thefollowing detailed description, wherein various configurations of thepresent disclosure are shown and described by way of illustration. Aswill be realized, the present disclosure is capable of other anddifferent configurations and its several details are capable ofmodification in various other respects, all without departing from thescope of the present disclosure. Accordingly, the drawings and detaileddescription are to be regarded as illustrative in nature and not asrestrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram depicting components of a system according toaspects of the subject technology.

FIG. 2 is a block diagram depicting an example layout of a non-volatilememory according to aspects of the subject technology.

FIG. 3 is a table illustrating relationships among non-volatile memorydies, blocks in each of non-volatile memory dies, data operation errortypes, and data operation error counts.

FIG. 4 depicts a flow diagram of an example process for managing a datastorage system according to aspects of the subject technology.

DETAILED DESCRIPTION

The detailed description set forth below is intended as a description ofvarious configurations of the subject technology and is not intended torepresent the only configurations in which the subject technology may bepracticed. The appended drawings are incorporated herein and constitutea part of the detailed description. The detailed description includesspecific details for the purpose of providing a thorough understandingof the subject technology. However, it will be apparent that the subjecttechnology may be practiced without these specific details. In someinstances, structures and components are shown in block diagram form inorder to avoid obscuring the concepts of the subject technology. Likecomponents are labeled with identical element numbers for ease ofunderstanding.

Controllers manage data storage systems, such as solid state drives(SSD), and perform data operations in non-volatile memory dies, such asNAND flash memory, of the data storage systems. For example, acontroller may send a data operation command (i.e., write command, readcommand, or erase command) to a non-volatile memory die. In return, thenon-volatile memory die may send an indication that an error occurredduring the data operation and the data operation command could not becompleted. In such a case, the controller may mark the block in whichthe operation failed as a bad block and remove the block from any futuredata operations. However, if the non-volatile memory die on which thebad block resides is a faulty non-volatile memory die, other blocks onthe faulty non-volatile memory die may also experience data operationerrors. Data operation errors lead to operation latency and negativelyimpact performance of data storage systems. The subject technologyimproves performance and reliability of data storage systems bymonitoring data operation error counts of blocks across non-volatilememory die and excluding non-volatile memory die from future dataoperations when the data operation error counts for non-volatile memorydie satisfy predetermined thresholds.

FIG. 1 is a block diagram depicting components of an example datastorage system 100 according to various implementations of the subjecttechnology. Data storage system 100 may include host system 110 and datastorage device 120. Data storage device 120 (for example, a solid statedrive) may include host interface 130, controller 140, memory 150, andnon-volatile memory dies 160A-160 n.

Host system 110 represents any device configured to be coupled to datastorage system 120 for storing data, to send data to and receive datafrom data storage system 120 via host interface 130. Host system 110 maybe a computing system such as a personal computer, a server, aworkstation, a laptop computer, PDA, smart phone, and the like.Alternatively, host system 110 may be an electronic device such as adigital camera, a digital audio player, a digital video recorder, andthe like. Host system 110 may use logical addressing for data commandssent to data storage system 120. Data storage system 120 may then maplogical addresses received from host system 110 to physical addresses ofmemory locations in non-volatile memory dies 160A-160 n.

Host interface 130 may include both electrical and physical connectionsfor operably coupling host system 110 to controller 140. Host interface130 may be configured to communicate data, addresses, and controlsignals between host system 110 and controller 140. Host interface 130may use any proprietary or standard interface protocols including, butnot limited to, Serial Advanced Technology Attachment (SATA), AdvancedTechnology Attachment (ATA), Small Computer System Interface (SCSI),PCI-extended (PCI-X), Fibre Channel, Serial Attached SCSI (SAS), SecureDigital (SD), Embedded Multi-Media Card (EMMC), Universal Flash Storage(UFS), and Peripheral Component Interconnect Express (PCIe).

According to aspects of the subject technology, host interface 130 mayimplement a wireless connection between host system 110 and data storagedevice 120 using standardized or proprietary wireless interfacestandards and protocols. In this regard, host interface 130 or othercomponents of data storage device 120 may include a wireless transceiverto place host system 110 and data storage device 120 in wirelesscommunication with each other.

Controller 140 is configured to store data received from host system 110in non-volatile memory dies 160A-160 n in response to a write commandfrom host system 110, and to read data stored in non-volatile memorydies 160A-160 n and to transfer the read data to host system 110 viahost interface 130 in response to a read command from host system 110.Controller 140 may include several internal components (not shown) suchas one or more processors, read-only memory (ROM), a flash componentinterface (for example, a multiplexer to manage instruction and datatransport along a connection to non-volatile memory dies 160A-160 n), anI/O interface, error correction code (ECC) module, and the like. The ECCmodule may be configured to generate code words to be stored innon-volatile memory dies 160A-160 n from data received from host system110 and to decode code words read from non-volatile memory dies 160A-160n before sending the decoded data to the host system 110. Various ECCsolutions may be used to encode and decode data to generate the codewords. In some aspects, one or more elements of controller 140 may beintegrated into a single chip. In other aspects, the elements may beimplemented on multiple discrete components.

Controller 140, using one or more processor cores for example, may beconfigured to execute code or instructions to perform the operations andfunctionality described herein, manage request flow and addressmappings, and to perform calculations and generate commands. The one ormore processor cores of controller 140 may be configured to monitor andcontrol the operation of the components in the controller 140 and datastorage device 120. Controller 140 may include a general-purposemicroprocessor, a microcontroller, a digital signal processor (DSP), anapplication specific integrated circuit (ASIC), a field programmablegate array (FPGA), a programmable logic device (PLD), a controller, astate machine, gated logic, discrete hardware components, or acombination of the foregoing.

Sequences of instructions may be stored as firmware on ROM withincontroller 140. Sequences of instructions also may be stored and readfrom memory 150, non-volatile memory dies 160A-160 n, or received fromhost system 110 (for example, via a host interface 130). ROM, memory150, non-volatile memory dies 160A-160 n, represent examples of machineor computer readable media on which instructions/code executable bycontroller 140 may be stored. Machine or computer readable media maygenerally refer to any tangible and/or non-transitory media used toprovide instructions to controller 140, its processor, including bothvolatile media, such as dynamic memory used for memory 150 or forbuffers within controller 140, and non-volatile media, such aselectronic media, optical media, and magnetic media.

Controller 140 may use memory 150 for temporary storage of data andinformation used to manage data storage device 120. In some aspects,memory 150 represents volatile memory used to temporarily store data andinformation used to manage data storage device 120. According to aspectsof the subject technology, memory 150 may be random access memory (RAM)such as double data rate (DDR) RAM. Other types of RAM also may be usedto implement memory 150. Memory 150 may be implemented using a singleRAM module or multiple RAM modules. While memory 150 is depicted asbeing distinct from controller 140, those skilled in the art willrecognize that memory 150 may be incorporated into controller 140without departing from the scope of the present disclosure.Alternatively, memory 150 may be a non-volatile memory such as amagnetic disk, flash memory, and the like.

Non-volatile memory dies 160A-160 n represent non-volatile memorydevices for storing data. According to aspects of the subjecttechnology, non-volatile memory dies 160A-160 n include, for example,NAND flash memory. Non-volatile memory dies 160A-160 n may comprisemultilevel cell (MLC) flash memory and/or three-level cell (TLC) memory.In some aspects non-volatile memory dies 160A-160 n may further comprisethree-dimensional (3D) flash memory. In some aspects, non-volatilememory dies 160A-160 n may comprise one or more hybrid memory devicesthat can function in one or more of a SLC, MLC, or TLC mode. The subjecttechnology is not limited to these types of memory and may be applied toflash memory cells configured and operated using more than three levels(e.g., 4 bits per cell, 5 bits per cell, etc.).

FIG. 2 is a block diagram depicting an example layout of non-volatilememory dies 160A and 160B according to aspects of the subjecttechnology. The number of non-volatile memory dies 160A-160 n in datastorage device 120 may be any number such as two, four, eight, sixteen,etc. For simplicity of discussion, non-volatile memory dies 160A and160B from non-volatile memory dies 160A-160 n are depicted in FIG. 2.Non-volatile memory dies 160A and 160B are not limited to any particularcapacity or configuration. Each of non-volatile memory dies 160A and160B may be organized into blocks and pages. Each of blocks may includea number of pages, for example 256, and each of pages may contain one ormore sectors or portions of data. For example, non-volatile memory die160A includes blocks 1A, 2A, 3A, and 4A. Further, for example, block 1Aincludes pages 11A, 12, A, 13A, and 14A. The number of non-volatilememory dies per data storage device, the number of blocks per die, thenumber of pages per block, the number of sectors per page, and/or thesize of the sectors are not limited to the numbers depicted in FIG. 2,but the numbers may vary.

FIG. 3 is a table 300 illustrating relationships among non-volatilememory dies, blocks in each of non-volatile memory dies, data operationerror types, and data operation error counts. Table 300 may be stored inmemory 150 and may be accessed and updated by controller 140.Alternatively, table 300 may be maintained in internal memory withincontroller 140.

Table 300 includes four columns indicating error counts for four blocks(i.e., blocks 1A-4A, blocks 1B-4B) in each of non-volatile memory dies(i.e., non-volatile memory dies 160A and 160B) in data storage device120, and one column indicating total error counts for respective dataoperation error types across a non-volatile memory die (i.e., across thefour blocks). For simplicity of discussion, only non-volatile memorydies 160A and 160B are shown in table 300. However, table 300 mayinclude non-volatile memory dies (i.e., non-volatile memory dies160A-160 n) in data storage device 120. The data operation error typesmay include a read error type, a write (program) error type, or an eraseerror type. In some aspects, the assignment of data operations to theprocessor cores may change based on availability of the processor coresat the time of data operation.

In some aspects, each of the processor cores in controller 140 may beassigned a data operation (i.e., write operation, read operation, eraseoperation). For example, controller 140 may include eight processorcores, and five processor cores are assigned to perform data operations;two processor cores are assigned to perform write operations; twoprocessor cores are assigned to perform read operations; and oneprocessor core is assigned to perform erase operations.

For example, controller 140 may send a program command using a firstprocessor core assigned to program operations to non-volatile memory die160A to perform a program operation on page 12A of block 1A ofnon-volatile memory die 160A. However, non-volatile memory die 160A mayexperience an error during the program operation. Non-volatile memorydie 160A may send an indication that the program operation on page 12Afailed to the first processor core in controller 140. The firstprocessor core increments the error count for a program operation errortype under block 1A of non-volatile memory die 160A in table 300.

Controller 140 may send a read command using a second processor coreresponsible for read operations to non-volatile memory die 160B to readdata in page 34B of block 3B of non-volatile memory die 160B. However,non-volatile memory die 160B may experience an error during the readoperation to page 34B, and report the error to the second processor corein controller 140. Based on the received report, controller 140increments the error count for a read operation error type under block3B of non-volatile memory die 160B in table 300 as illustrated in table300.

In some aspects of the subject technology, in response to the readcommand, non-volatile memory die 160B may return data from page 34B tothe second processor core in controller 140. The second processor coremay increment the error count for a read operation error type when harddecoding the data from page 34B fails. In some aspects, the secondprocessor core may increment the error count for a read operation errortype when soft decoding of the data fails and RAID recovery is performedon the data.

Controller 140 may send an erase operation using a third processor coreresponsible for erase operations to non-volatile memory die 160B toerase data of block 2B of non-volatile memory die 160B. However,non-volatile memory die 160B may experience an error during the eraseoperation, and report the error to the third processor core. Controller140 increments the error count for an erase operation error type underblock 2B in table 300. Controller 140 may mark block 2B as a bad block.In addition, controller 140 may relocate data stored in block 2B toanother block in the data storage device and remove block 2B from futuredata operations.

In some aspects, sub-tables of table 300 may be stored in internalmemory within controller 140 and may be accessible by the processorcores in controller 140. The sub-tables may be associated with specificdata operation errors and may be accessible to the processor coresassigned to the data operation associated with the data operation error.For example, each of the third and fourth processor cores assigned toperform erase operations may be associated with a first erase errorsub-table and a second erase error sub-table, respectively. The thirdprocessor core may be designated as an erase error sub-table manager.The erase error sub-table manager (i.e., the third processor core) mayaccumulate the error counts for erase operation error type forrespective non-volatile memory dies from all processor cores assigned toerase operation (i.e., the fourth processor core), and writes theaccumulated error count for the respective non-volatile memory dies totable 300.

In some aspects, the first processor core may maintain a sub-table oftable 300 for error counts associated to program operation errors. Thefirst processor core may write the total error count of the programoperation errors to memory 150 to update table 300 with the total errorcount of the program operation errors for the corresponding non-volatilememory die (i.e., non-volatile memory die 160A).

Controller 140 sums error counts of the blocks for respective operationerror types, and determines the total error counts of respectiveoperation error types for each of non-volatile memory dies. For example,one error is marked for block 2A for read operation error type. Thus,controller 140 enters one in the column of total A for read operationerror type in non-volatile memory die 160A. Controller repeats the sameor similar steps to determine total error counts for all of operationerror types in both non-volatile memory dies 160A and 160B.

Controller 140 may determine whether a total error count for a specificdata operation error type for non-volatile memory die satisfies apredetermined threshold value after an error count for the specific dataoperation error type is incremented. Alternatively, controller 140 mayperform the determination periodically or after a predetermined numberof data operations are executed.

Controller 140 may mark non-volatile memory die that includes one ormore total error counts satisfying the predetermined threshold value forexclusion from future data operation. Controller 140 may maintain anexclusion table that includes, for example, a list of non-volatilememory dies 160A-160 n. For instance, when controller 140 determinesthat the total error count for write operation error type innon-volatile memory die 160B satisfies a predetermined threshold value,controller 140 may flag or mark non-volatile memory die 160B on the listin the exclusion table that non-volatile memory die 160B is excludedfrom subsequent data operations. For example, when controller 140receives a write command from host system 110 after controller 140determines that the total error count for write operation error type innon-volatile memory die 160B satisfies a predetermined threshold value,controller 140 may reference the exclusion table and select blocks orpages of non-volatile memory die other than non-volatile memory die 160Bto write data to.

However, controller 140 may continue to send a read command tonon-volatile memory die 160B until all data on non-volatile memory die160B is relocated to non-volatile memory die which is not marked forexclusion. Alternatively, after controller marks non-volatile memory diefor exclusion, controller may execute a garbage collection operation onall blocks on the non-volatile memory die. For example, controller 140may not send any data operation command to non-volatile memory die 160Bwhich is marked for exclusion, and execute a garbage collectionoperation on non-volatile memory die 160B to relocate data innon-volatile memory die 160B to non-volatile memory die 160A.

The predetermined threshold value may be based on a percentage of thenumber of blocks in a non-volatile memory die. For example, non-volatilememory die 160B includes four blocks (i.e., blocks 1B-4B), and thepercentage may be set to fifty-percent. Thus, the threshold value towhich the total error counts for respective operation error types innon-volatile memory die 160B is set to two. Referring to table 300,blocks 2B and 3B of non-volatile memory die 160B both have one eraseerror count, thus, the total error count for the erase operation errortype for non-volatile memory die 160B is two. Because at least one ofthe total error counts for non-volatile memory die 160B satisfies thethreshold value (i.e., two), controller 140 marks non-volatile memorydie 160B for exclusion from future data operations to be performed toany blocks or pages in non-volatile memory die 160B.

The threshold value for total error counts may be configurable dependingon the life state of the data storage device. For example, when the datastorage device is at an early state of life, non-volatile memory die isless likely to experience errors that may occur due to a high wearlevel. Thus, the threshold at the early state of life of the datastorage device may be set to 25 percent of the total number of blocks inthe non-volatile memory die. On the other hand, when the data storagedevice nears end of its lifespan, the data storage device becomes moresusceptible to errors due to a high wear level. Thus, the thresholdvalue close to the end state of life of the data storage device may beset to a higher percentage, such as fifty percent, than that of theearly state of life.

FIG. 4 depicts a flow diagram of an example process 400 for managingdata storage device 120 according to aspects of the subject technology.For explanatory purposes, the various blocks of example process 400 aredescribed herein with reference to the components and/or processesdescribed herein. The one or more of the blocks of process 400 may beimplemented, for example, by one or more processors, including, forexample, controller 140 of FIG. 1 or one or more components orprocessors of controller 140. In some implementations, one or more ofthe blocks may be implemented apart from other blocks, and by one ormore different processors or controllers. Further for explanatorypurposes, the blocks of example process 400 are described as occurringin serial, or linearly. However, multiple blocks of example process 400may occur in parallel. In addition, the blocks of example process 400need not be performed in the order shown and/or one or more of theblocks of example process 400 need not be performed.

At block 410, a controller detects a data operation error for a dataoperation initiated in a non-volatile memory die in a plurality ofnon-volatile memory dies in a data storage device. For example,controller 140 may send a read operation command to non-volatile memorydie 160B based on a command received from host system 110 via hostinterface 130. Non-volatile memory die 160B may read data in page 31B ofblock 3B, and send the data to controller 140. However, during harddecoding of the data, controller 140 may encounter an error. In responseto the error during the hard decoding, controller 140 may proceed toperform soft decoding on the data of page 31B to recover the data. Whencontroller 140 encounters an error during the soft decoding, controller140 may perform RAID recovery to recover the data. Alternatively,non-volatile memory die 160B may encounter an error and not complete theread operation. In such a case, instead of sending the data of page 31B,non-volatile memory die 160B may report the error to controller 140.

At block 420, the controller increments an error count for an error typeof the data operation error for the non-volatile memory die. Forexample, controller 140 increments an error count of the read operationfor block 3B in non-volatile memory die 160B when controller 140encounters an error during hard decoding of the data from page 31B. Insome aspects, controller 140 may increment the error count of the readoperation for block 3B when controller 140 encounters an error duringthe soft decoding of the data form page 31B or when controller 140performs RAID recovery. Alternatively, controller 140 may increment theerror count of the read operation for block 3B when controller 140receives a report of an error from non-volatile memory die 160B.

At block 430, the controller determines that the incremented error countsatisfies a threshold value for the error type of the data operationerror. For example, the total error count for the read operation errortype in non-volatile 160B is compared to a threshold value. Thethreshold value may be a predetermined percentage of a total number ofblocks in the non-volatile memory die. For instance, if a non-volatilememory die includes four thousand blocks, the threshold value for anerror type may be two thousand error counts which are 50 percent of thefour thousand blocks in the non-volatile memory die. Further, thresholdvalues for error counts may be different for each of the error types.Furthermore, the threshold values for error counts may be configurabledepending on the life state of the data storage device.

In some aspects, the controller may maintain a consecutive count for anerror type for a die, and increment the consecutive count when the samedata operation error is detected consecutively. Controller may maintaina consecutive error count for respective error types for each ofnon-volatile memory dies. For example, controller 140 may consecutivelyreceive a first notification from non-volatile memory die 160B regardingan erase operation error in block 2B and a second notification fromnon-volatile memory die 160B also indicating an erase operation error inblock 3B one after another. Controller 140 may increment a consecutiveerror count for the erase operation errors in non-volatile memory die160B. However, when controller 140 receives a third notificationindicating successful completion of an erase operation in block 3B ofnon-volatile memory die 160B, controller 140 may reset the consecutiveerror count for the erase operation error in block 3B.

Alternatively, a controller may maintain a consecutive error count forall error types in each of non-volatile memory dies. For example,controller 140 may consecutively receive a first notification indicatinga program operation error from non-volatile memory die 160A and a secondnotification indicating an erase operation error from non-volatilememory die 160A one after another. Controller 140 increments aconsecutive error count for non-volatile memory die 160A. However, whencontroller 140 receives a third notification indicating successfulcompletion of a read operation from non-volatile memory die 160A,controller may reset the consecutive error count for non-volatile memorydie 160A. The operation-specific consecutive error count threshold valuemay be equal to or less than the error count threshold value. Further,the operation-specific consecutive error count threshold value may beless than the non-volatile memory die specific consecutive error countthreshold value.

At block 440, the controller marks the non-volatile memory die whoseerror count of an error type satisfies the error count threshold valuefor exclusion from subsequent data operations. For example, controller140 may mark non-volatile memory die 160B if the erase operation errorcount for non-volatile memory die 160B is determined to satisfy theerror count threshold value. Controller 140 may also excludenon-volatile memory die 160B from future data operations. In someaspects, the controller may mark the non-volatile memory die whoseconsecutive count of an error type satisfies the consecutive countthreshold value for exclusion from subsequent data operations. Forinstance, controller 140 may mark non-volatile memory die 160B forexclusion from future data operations if the operation-specificconsecutive error count for the erase operation satisfies theoperation-specific consecutive error count threshold value. For example,controller 140 may mark non-volatile memory die 160A for exclusion fromfuture data operations if the non-volatile memory die specificconsecutive error count satisfies the non-volatile memory die specificconsecutive error count threshold value.

It is understood that illustrative blocks, modules, elements,components, methods, and algorithms described herein may be implementedas electronic hardware, computer software, or combinations of both. Toillustrate this interchangeability of hardware and software, variousillustrative blocks, modules, elements, components, methods, andalgorithms have been described above generally in terms of theirfunctionality. Whether such functionality is implemented as hardware orsoftware depends upon the particular application and design constraintsimposed on the overall system. Skilled artisans may implement thedescribed functionality in varying ways for each particular application.Various components and blocks may be arranged differently (e.g.,arranged in a different order, or partitioned in a different way) allwithout departing from the scope of the subject technology.

It is understood that the specific order or hierarchy of steps in theprocesses disclosed is presented as an illustration of some exemplaryapproaches. Based upon design preferences and/or other considerations,it is understood that the specific order or hierarchy of steps in theprocesses may be rearranged. For example, in some implementations someof the steps may be performed simultaneously. Thus the accompanyingmethod claims present elements of the various steps in a sample order,and are not meant to be limited to the specific order or hierarchypresented.

The previous description is provided to enable any person skilled in theart to practice the various aspects described herein. The previousdescription provides various examples of the subject technology, and thesubject technology is not limited to these examples. Variousmodifications to these aspects will be readily apparent to those skilledin the art, and the generic principles defined herein may be applied toother aspects. Thus, the claims are not intended to be limited to theaspects shown herein, but is to be accorded the full scope consistentwith the language claims, wherein reference to an element in thesingular is not intended to mean “one and only one” unless specificallyso stated, but rather “one or more.” Unless specifically statedotherwise, the term “some” refers to one or more. Pronouns in themasculine (e.g., his) include the feminine and neuter gender (e.g., herand its) and vice versa. Headings and subheadings, if any, are used forconvenience only and do not limit the subject disclosure.

The predicate words “configured to,” “operable to,” and “programmed to”do not imply any particular tangible or intangible modification of asubject, but, rather, are intended to be used interchangeably. Forexample, a processor configured to monitor and control an operation or acomponent may also mean the processor being programmed to monitor andcontrol the operation or the processor being operable to monitor andcontrol the operation. Likewise, a processor configured to execute codemay be construed as a processor programmed to execute code or operableto execute code.

The phrases “in communication with” and “coupled” mean in directcommunication with or in indirect communication with via one or morecomponents named or unnamed herein (e.g., a memory card reader).

A phrase such as an “aspect” does not imply that such aspect isessential to the subject technology or that such aspect applies to allconfigurations of the subject technology. A disclosure relating to anaspect may apply to all configurations, or one or more configurations.An aspect may provide one or more examples. A phrase such as an aspectmay refer to one or more aspects and vice versa. A phrase such as an“embodiment” does not imply that such embodiment is essential to thesubject technology or that such embodiment applies to all configurationsof the subject technology. A disclosure relating to an implementationmay apply to all aspects, or one or more aspects. An implementation mayprovide one or more examples. A phrase such as an “embodiment” may referto one or more implementations and vice versa. A phrase such as a“configuration” does not imply that such configuration is essential tothe subject technology or that such configuration applies to allconfigurations of the subject technology. A disclosure relating to aconfiguration may apply to all configurations, or one or moreconfigurations. A configuration may provide one or more examples. Aphrase such as a “configuration” may refer to one or more configurationsand vice versa.

The word “exemplary” is used herein to mean “serving as an example orillustration.” Any aspect or design described herein as “exemplary” isnot necessarily to be construed as preferred or advantageous over otheraspects or designs.

What is claimed is:
 1. A data storage system, comprising: a plurality ofmemory devices comprising a first memory device; and one or morecontrollers configured to cause: detecting a first data operation errorof the first memory device; detecting a second data operation error ofthe first memory device; in response to detecting, consecutively, thefirst and second data operation errors: when the first and second dataoperation errors are of a first error type, incrementing a firstoperation-specific consecutive error count; and when the first andsecond data operation errors are of different error types, incrementinga device-specific consecutive error count, without incrementing thefirst operation-specific consecutive error count; and in response tohaving the device-specific consecutive error count satisfy a firstthreshold value, providing an indication to exclude the first memorydevice from a subsequent data operation.
 2. The data storage system ofclaim 1, wherein when the first and second data operation errors aredetected without being consecutive to each other, the one or morecontrollers are configured to cause refraining from incrementing each ofthe first operation-specific consecutive error count and thedevice-specific consecutive error count.
 3. The data storage system ofclaim 1, wherein when the first and second data operation errors are ofthe first error type and detected consecutively, the one or morecontrollers are configured to cause refraining from incrementing thedevice-specific consecutive error count.
 4. The data storage system ofclaim 1, wherein in response to the first operation-specific consecutiveerror count satisfying a second threshold value, the one or morecontrollers are configured to cause identifying the first memory deviceto be excluded from a subsequent memory operation.
 5. The data storagesystem of claim 4, wherein: the second threshold value is less than thefirst threshold value; and in response to the first operation-specificconsecutive error count satisfying the second threshold value, the oneor more controllers are configured to cause execution of a garbagecollection on all blocks on the first memory device.
 6. The data storagesystem of claim 4, wherein: identifying the first memory devicecomprises identifying the first memory device to be excluded fromparticipating in the subsequent memory operation of a first dataoperation type while permitting the first memory device to participatein a subsequent memory operation of a second data operation type; andthe second data operation type is different from the first dataoperation type.
 7. The data storage system of claim 1, wherein: thefirst error type is associated with a first data operation type; and theone or more controllers are configured to cause: resetting the firstoperation-specific consecutive error count associated with the firsterror type when a data operation of the first data operation type issuccessfully completed.
 8. The data storage system of claim 1, wherein:the different error types are associated with first and second dataoperation types; and the one or more controllers are configured tocause: resetting the device-specific consecutive error count when a dataoperation of a third operation type is successfully completed.
 9. Thedata storage system of claim 1, wherein the first operation-specificconsecutive error count comprises a cumulative error count for allblocks of the first memory device.
 10. The data storage system of claim1, wherein the first error type is one of a write operation error type,a read operation error type, and an erase operation error type.
 11. Thedata storage system of claim 10, wherein the one or more controllers areconfigured to cause: maintaining a respective operation-specificconsecutive error count for the first memory device for each of thewrite operation error type, the read operation error type, and the eraseoperation error type; and maintaining a respective threshold value foreach of the write operation error type, the read operation error type,and the erase operation error type.
 12. The data storage system of claim1, wherein: the data storage system comprises one or more memoriescomprising sub-tables; the one or more controllers comprise a pluralityof processor cores; each of the sub-tables is associated with a dataoperation error type and is accessible to a processor core of theplurality of processor cores assigned to a data operation associatedwith the data operation error type; and another processor core of theplurality of processor cores is configured to accumulate error countsfor a respective data operation error type for a respective memorydevice.
 13. A method, comprising: detecting a first data operation errorof a first memory device of a plurality of memory devices; detecting asecond data operation error of the first memory device; in response todetecting, consecutively, the first and second data operation errors:when the first and second data operation errors are of a first errortype, incrementing a first operation-specific consecutive error count;and when the first and second data operation errors are of differenterror types, incrementing a device-specific consecutive error count,without incrementing the first operation-specific consecutive errorcount; and in response to having the device-specific consecutive errorcount satisfy a first threshold value, providing an indication toexclude the first memory device from a subsequent data operation. 14.The method of claim 13, wherein when the first and second data operationerrors are detected without being consecutive to each other, the methodcomprises refraining from incrementing each of the firstoperation-specific consecutive error count and the device-specificconsecutive error count.
 15. The method of claim 13, wherein when thefirst and second data operation errors are of the first error type anddetected consecutively, the method comprises refraining fromincrementing the device-specific consecutive error count.
 16. The methodof claim 13, wherein in response to the first operation-specificconsecutive error count satisfying a second threshold value, the methodcomprises identifying the first memory device to be excluded from asubsequent memory operation.
 17. The method of claim 16, wherein: thesecond threshold value is less than the first threshold value; and inresponse to the first operation-specific consecutive error countsatisfying the second threshold value, the method comprises executing agarbage collection on all blocks on the first memory device.
 18. Anapparatus, comprising: means for detecting a first data operation errorof a first memory device of a plurality of memory devices; means fordetecting a second data operation error of the first memory device; inresponse to detecting, consecutively, the first and second dataoperation errors: when the first and second data operation errors are ofa first error type, means for incrementing a first operation-specificconsecutive error count; and when the first and second data operationerrors are of different error types, means for incrementing adevice-specific consecutive error count, without incrementing the firstoperation-specific consecutive error count; and in response to havingthe device-specific consecutive error count satisfy a first thresholdvalue, means for providing an indication to exclude the first memorydevice from a subsequent data operation.
 19. The apparatus of claim 18,wherein when the first and second data operation errors are detectedwithout being consecutive to each other, the apparatus comprises meansfor refraining from incrementing each of the first operation-specificconsecutive error count and the device-specific consecutive error count.20. The apparatus of claim 18, wherein when the first and second dataoperation errors are of the first error type and detected consecutively,the apparatus comprises means for refraining from incrementing thedevice-specific consecutive error count.